სსიპ - ფერდინანდ თავაძის მეტალურგიისა და მასალათმცოდნეობის ინსტიტუტი
LEPL - FERDINAND TAVADZE METALLURGY AND MATERIALS SCIENCE INSTITUTE
№ 6 Semiconducting Materials Science Laboratory
Bela Kvirkvelia
Researcher (Part-time)
iza_be_ll@hotmail.com

Date of Birth

10.01.1958

Education

  • Tbilisi State University. Faculty of Physics. Master. Nuclear Physics;
  • Georgian Technical University. Ph.D. Faculty of Informatics and Control Systems. Department of Physics;

Scientific Degree (Rank)

  • PhD;

Work Experience

  • 2013 - present - LEPL Ferdinand Tavadze Institute of Metallurgy and Materials Science, Engineer;
  • 2010 - present - Iv.Javakhishvili Tbilisi State University. Substance Research Institute. Head of Atomic Absorption Department;
  • 2009-2010 - Iv.Javakhishvili Tbilisi State University. Substance Research Institute. Senior Researcher;
  • 1992-2007 - Iv.Javakhishvili Tbilisi State University. Semiconductor Materials Research Laboratory. Lead Engineer;
  • 1980-1992 - Scientific-Production Association "Mioni". Engineer, Lead Engineer, Head of Office, Head of Department;

Papers and Publications

  • Transport Properties of InAs-InP Solid Solutions. Journal of Electrical Engineering Vol. 2. pp.207-212. David Publishing Company. New York. NY 10034, USA. (2014);
  • Electrical Properties and Crystal Perfection of the n-Type Si-rich SiGe Alloys Bulk Single-Crystals. Journal of Electrical Engineering 3 pp. 53-59. David Publishing Company. New York. NY 10034, USA. (2015);
  • Preparation and Investigation of Electrical Properties of Indium Phosphide, Indium Arsenide and Their Alloys, Before and After Irradiation with Fast Neutrons and Electrons. Proceedings of the Georgian National Academy of Sciences. Chemical Series. Vol. 41. №1, 2. pp.77-84. Tbilisi. (2015);
  • Transport Properties in Solid Solutions of InP and InAs Semiconducting Compounds. Abstracts of the 32nd International Conference on the Physics of Semiconductors (ICPS 2014) Austin, TX, USA, http://www.icps2014.org/abstracts/Posters_Narrow_Gap_Semiconductor.pdf ;
  • Phenomenon of Mutual Compensation of Radiation Donors and Acceptors and Creation of Radiation-Resistant Materials. Journal of Electrical Engineering, David Publishing Company. Volume 2, Number 4, pp.187-192. David Publishing Company. New York. NY 10034, USA. (2014)
  • Current Carriers Scattering in InP-InAs solid Solutions. Journal of Electrical Engineering JEE. Vol.2, #2, pp.86-91. David Publishing Company. New York. NY 10034, USA. (2014);
  • Carrier mobility of InAs- and InP- rich InAs-InP solid solutions irradiated by fast neutrons. AIP (American Institute of Physics) Conference Proc. 1566, 103. © 2013 AIP Publishing LLC. Zurich, Switzerland. http://dx.doi.org/10.1063/1.4848306 ;
  • Electical Properties of InP Crystals With Inhomogeneities regions. ACTA PHYSICA POLONICA A. Vol.121,#1; pp.27-29; http://przyrbwn.icm.edu.pl/APP/PDF/121/a121z1p07.pdf . (2012);
  • Current Carriers Scattering on the Neutral Impurity Atoms in Crystals of Indium Phosphide. AIP (American Institute of Physics) Conference Proc. 1400, 37(2011); http://dx.doi.org/10.1063/1.3663081 . Tukey (2011);

Inventions ( Copyright Certificates, Patents)

  • The device to keep the odoration constant level in household gas, National centre of intellectual propriety. #1239;
  • A method of improving the quality of the crystals of indium phosphide (InP). National Intellectual Property Center. “Saqpatenti”, #14143/01;

Participation in Scientific Symposiums and Conferences

  • 2011 - Advances in Applied Physics and Materials Science Congress. Antalya, Turkey;
  • 2012 - ICPS 2012-31 International Conference on the Physics of Semiconductors. Zurich, Switzerland;
  • 2013 - Seventh International Conference "Physics in the LHC (Large Hadron Collider) era". Tbilisi, Georgia;
  • 2014 - 32nd International Conference on the Physics of Semiconductors (ICPS 2014). Austin. TX. USA;
  • 2014 - REINM 2014. Radiation Effects in Insulators and Non-metallic Materials. Astana, Kazakhstan;

Participation in Scientific Grant Projects

  • 2015-2018. Shota Rustaveli National Science Foundation. Project #DI/38/7-220/14. Researcher;
  • 2014-2015. STCU-SRNSF. Project #5910. Group Leader;
  • 2013-2014. Shota Rustaveli National Science Foundation. #DO/104/6-160/13. Doctoral Student;
  • 2013 Shota Rustaveli National Science Foundation. Extreme Weather and Climate Events in the Southern Caucasus-Black Sea Region. International Conference. Logistics assistant;
  • 2012–2013. EU. Implementation of the project EU CHEMLAB-GEO for Georgia. Participant;
  • 2010-2011. Closed Nuclear Centres Partnership (CNCP). Chief Engineer;
  • 2010 Federal Department of Foreign Affairs FDFA, The Embassy of Switzerland. Senior Researcher;
  • 2009-2011 Georgian National Science Foundation (GNSF). Development of new radiation resistant semiconductor materials on the base of InPxAs1-x solid solution. Main Researcher;
  • 2005-2006 Ministry of Education and Science of Georgia. Study of physical phenomena in the actual prospective materials and on their base created elements and structures. Lead Engineer;

Additional information

  • 2014-Transfer of Technology. Science and Technology Center in Ukraine (STCU);