სსიპ - ფერდინანდ თავაძის მეტალურგიისა და მასალათმცოდნეობის ინსტიტუტი
LEPL - FERDINAND TAVADZE METALLURGY AND MATERIALS SCIENCE INSTITUTE
№ 6 Semiconducting Materials Science Laboratory
Nana Qobulashvili
Engineer
nanakobulashvili@gmail.com

Date of Birth

22.10.1958

Education

  • 1985-1991 - Georgian Technical University, Physics Department;

Scientific Degree (Rank)

  • Master;

Work Experience

  • 2016 - present - LEPL Ferdinand Tavadze Institute of Metallurgy and Materials Science, Technician;
    2011-2016 - Laboratory assistant;
    1991-2011 - Senior Engineer;
    1975-1991 - Laboratory assistant;

Scientific Interests

  • Semiconductor Technology and  Materials Science;

Papers and Publications

Publications: 25, among them: 

  • Current Carriers Scattering on the Neutral Impurity Atoms in Crystals of Indium Phosphide.Advances in Applied Phisics Materials Science Congress. APMAS 2011 v.II. p.16. Turkey;
  • Carbon in SiGe Alloy “New Developments in Materials Science”-Nova Science Publishers-Co-editor, USA, 2010;
  • Thermal expansion coefficient and internal friction of InAs-crystals Thermal expansion coefficient and internal friction of InAs-crystals.
  • Current Carriers Scattering in Semiconductors with Various Types of Inhomogeneity. Nano Studies № 3, 4, 2011 p.6;
  • Effective segregation coefficient of micro impurities in si obtained by Czochralski pulling directly from metallurgical Si mel. Proc. of the 2nd international conference: "Modern technologies and methods of inorganic materials science". April 20-24, 2015. Tbilisi. Georgia;
  • Распределение кислорода в кристаллах сплавов SiGe В кН. Термоэлектрики и их применения. Доклады. ХI Межгосударственный Семинара Санкт-Петербург. cтр. 285-287, 2009;

Participation in Scientific Symposiums and Conferences

  • Структурное совершенство и электрические свойства объёмных монокристалло сплавов SiGe.G Х1 Межгос.семинар РАН «Термоэлектрики и их применения». Санкт-Петербург, Россия(2008);
  • Распределение кислорода в кристаллах сплавов SiGe. Х1 Межгос.семинар РАН «Термоэлектрики и их применения». Санкт-Петербург, Россия (2008);
  • Elza Khutsishvili, L.Gabrichidze, N.Kobulashvili at alias. Scientific Conference Modern Iissues of Applied Physics. Thermal expansion coefficient and internal frictin of InAs-crystals. Tbilisi 2011; 
  • Elza Khutsishvili, L.Gabrichidze, N.Kobulashvili at alias. The Advances in Applied Phisics and Materials Science Congress 12 tu 15 May. Current Carriers Scattering on the Neutral Impurity Atoms in Crystals of Indium phosphide. Antalya, Turkey. 2011; 
  • Elza Khutsishvili, L.Gabrichidze, N.Kobulashvili at alias. Effective segregation coefficient of microimpurities in si obtained by czochralski pulling directly from metallurgical Si melt the 2nd international conference: "Modern technologies and methods of inorganic materials science" will be held on April 20-24, 2015 in Tbilisi (Georgia 2015);
  • Исследование ортическогопоглощения в соединениях III-V. The International Conference on Advanced Materials and Technologies (ICAMT), 21-23 October, 2015, Tbilisi, Georgia;

Participation in Scientific Grant Projects

  • 2004 - 2006 - USTC GG-87;
  • 2008 - 2010 - USTC N-3997;