სსიპ - ფერდინანდ თავაძის მეტალურგიისა და მასალათმცოდნეობის ინსტიტუტი
LEPL - FERDINAND TAVADZE METALLURGY AND MATERIALS SCIENCE INSTITUTE
№ 6 Semiconducting Materials Science Laboratory
Elza Khutsishvili
Researcher
elzakhutsishvili@yahoo.com

Date of Birth

19.07.1941

Education

  • 1958-1964 - Iv.Javakhishvili Tbilisi State University, Tbilisi, Georgia, Physicist, Specialty - Solid State Physicst, Diploma C№445668;

Scientific Degree (Rank)

  • Academic degree of Doctor in physics and mathematics, Diploma МФМ №PO018376бб,1972;

Work Experience

  • 1964 - present - LEPL Ferdinand Tavadze Institute of Metallurgy and Materials Science, Technician;
    1964-1966 - Laboratory assistant;
    1967-1975 - Research scientist;
    1975-2006 - Senior researcher;
    2007 - present -Research scientist;

Scientific Interests

  • Solid State Physics, Semiconductor Physics, Technology, Materials Science, Engeneering, Radiation  Physics and Technology;

Papers and Publications

Author of 115 publications, among them in impact-factor journals: of Umited State America, United Kingdom, Germany, Japan, Czechoslovakia, Russia. ”Physica Status Solidi”, ”Solid State Communication”, ”Applied Optics”, ”Physical Review”, ”Physics and technique of semiconductors”, Journal of Electrical Engineering, American Institute of Physics (AIP);
Citations -205, h_index-8, g_index-9;

  • N. Kekelidze, G. Tavadze, E. Khutsishvili, L. Gabrichidze , G. Mikaberidze, Effective distribution coefficient of impurities in Si at pulling from MG-Si melt. Eur. Chem. Bull., vol.5, #11, 2016.
  • N. Kekelidze, E. Khutsishvili, D. Kekelidze, B. Kvirkvelia, L. Nadiradze, K. Sadradze Peculiarities of “alloy” scattering in semiconductors, vol.5, No 9, pp.380-382, 2016.
  • N.Kekelidze, , E.Khutsishvili, Z. Kvinikadze, Z.Davitaja, D.Kekelidze, B.Kvirkvelia, K. Sadradze, L. Nadiradze, G.Kekelidze. Nanosize clusters in compounds InAs and InP and their solid solutions InPxAs1–x , American Journal of Nano Research and Applications, vol.5, 2017.
  • E. Khutsishvili, N. Khutsishvili, B. Kvirkvelia, G. Kekelidze, L Nadiradze, N. Kekelidze. Electrical Properties and Crystal Perfection of the n-Type Si-rich SiGe Alloys Bulk Single-Crystals. Journal of Electrical Engineering 3 (2015) pp. 53-59. doi: 10.17265/2328-2223/2015.02.001. 2015.
  • N.Kekelidze, D.Kekelidze, E.Khutsishvili, B.Kvirkvelia, L.Nadiradze. The effect of mutual compensation of radiation donors nd acceptors in semiconductors. Proc. of the 2nd international conference: "Modern technologies and methods of inorganic materials science" April 20-24, 2015 in Tbilisi (Georgia), pp.197-201, 2015.
  • E. Khutsishvili, N.Khutsishvili, L.Gabrichidze, N.Kobulashvili, N. N. Kekelidze. Effective segregation coefficient of microimpurities in Si obtained by Czochralski pulling directly from metallurgical Si melt. Proc. of the 2nd international conference: "Modern technologies and methods of inorganic materials science" April 20-24, 2015 in Tbilisi (Georgia), pp. 254-260, 2015.
  • E.Khutsishvili, N.Khutsishvili, L.Gabrichidze, N.Kobulashvili, N. N. Kekelidze. Removal of Impurities from Metallurgical Silicon. Proc. of the International Conference on Advanced Materials and Technologies (ICAMT), 21-23 October, Tbilisi, Georgia, pp. 86-89, 2015.
  • L.Nadiradze, B.Kvirkvelia, E.Khutsishvili, D.Kekelidze, G.Kekelidze, N.Kekelidze. Investigation of Optical Absorption in III-V Compounds. International Copference Advanced Materials and Technologies. Proceedings.Dedicated to the anniversary of foundation of Ilia Vekua Sukhumi Institute of Physics and Technology. pp. 106-109. 2015.
  • N.Kekelidze, D.Kekelidze, E.Khutsishvili, B.Kvirkvelia, L.Nadiradze, I.Ambokadze, G.Kekelidze. Technology for creation of radiation hard materials. International conference Advanced Materials and Technologies. Dedicated to the anniversary of foundation of Ilia Vekua Sukhumi Institute of Physics and Technology. Proceedings. pp.68-70. 2015.
  • Квирквелия Б.В., Кекелидзе Н.П., Хуцишвили Е. B., Кекелидзе Д. Г., Надирадзе Л. Д., Амбокадзе И.Р. Получение и исследование электрических свойств фосфида индия, арсенида индия и их сплавов до и после облучения быстрыми нейтронами и электронами."Мацне" национальной академии наук, Серия Химии, ISSN - 0132 06074. 2015.
  • N. Kekelidze, E. Khutsishvili, B. Kvirkvelia, G. Kekelidze. Transport Properties of InAs-InP Solid Solutions. Journal of Electrical Engineering.Volume 2, Number 5, (Serial Number 6). pp. 207-212, doi: 10.17265/2328-2223/2014.05.002. 2014.
  • N.Kekelidze, E. Khutsishvili, B.Kvirkvelia, G.Urushadze, G.Kekelidze. Transport Properties in Solid Solutions of InP & InAs Semiconducting Compounds. Abstracts of the 32nd International Conference on the Physics of Semiconductors (ICPS 2014) Austin, USA, August 10-15,(2014). http://www.icps2014.org/abstracts/Posters_Narrow_Gap_Semiconductor.pdf . 2014.
  • Nodar Kekelidze, Elza Khutsishvili, Bella Kvirkvelia, Gulnara Urushadze and George Kekelidze. Current Carriers Scattering in InP-InAs Solid Solutions. Journal of Electrical Engineering JEE. David Publishing Company. Vol.2, #2, pp.86-91, 2014.
  • N.Kekelidze. D.Kekelidze. V.Aliyev, E.Khutsishvili, G.Kekelidze, B.Kvirkvelia. The Effect of Mutual Compensation of Radiation Donors and Acceptors and Creation of Radiation-resistant Materials. Abstracts of International Conference REINM -Radiation Effects in Insulators and Non-metallic Materials. Astana. Book of Abstracts. p.27, 2014.
  • N. Kekelidze, D. Kekelidze, V. Aliyev, E. Khutsishvili, G. Kekelidze, N. Khutsishvili, B. Kvirkvelia. Creation and Investigation of Radiation-hard Materials for Nuclear- Radiation Sensors. Book of Abstracts of International Conference “Tbilisi- Spring-2014”. Nuclear Radiation Nanosensors and Nanosensory Systems. The NATO Science for Peace and Security Programme. Publishing House "Technical University". pp.66-68. March. Tbilisi, 2014.
  • N. Kekelidze, B. Kvirkvelia, D. Kekelidze, V. Aliyev, E. Khutsishvili, G.Kekelidze. Phenomenon of Mutual Compensation of Radiation Donors and Acceptors and Creation of Radiation-Resistant Materials. Journal of Electrical Engineering, David Publishing Company. Volume 2, Number 4, pp.187-192. 2014.
  • E. Khutsishvili, L. Gabrichidze, B. Kvirkvelia, G. Urushadze, G. Kekelidze, N. Kekelidze. Electrical Properties & Crystal Perfection of the n-type Si-rich SiGe Alloys Bulk Single-Crystals. The 32nd International Conference on the Physics of Semiconductors (ICPS 2014) Austin, USA. http://www.icps2014.org/abstracts/Narrow_Gap_Semiconductor_I.pdf , 2014.
  • Leonti Gabrichidze, Elza Khutsishvili, Nana Kobulashvili, Nunu Khutsishvili, Neli Gonjilashvili, Gulnara Urushadze, Iago Kupreishvili , Nodar Kekelidze. Research of properties of refined silicon by the method of pulling from metallurgical silicon melt. Proceedings of the Georgian National Academy of Sciences. Chemical series. v. 40, №4, pp.351-353, 2014.
  • Elza Khutsishvili, Nunu Khutsishvili, Iago Kupreishvili , Leonti Gabrichidze, Nana Kobulashvili1 Neli Gonjilashvil, Gulnara Urushadze, Nodar Kekelidze. X-Ray structural research of chemical content  of silicon pulled   from   metallurgical silicon melt. Proceedings of the Georgian National Academy of Sciences. Chemical series. v.40, №4, pp. 342-345, 2014.
  • Leonti Gabrichidze, Elza Khutsishvili, Nana Kobulashvili, Nunu Khutsishvili,Teimuri Gigitashvili, Ramaz Kharati, Gulnara Urushadze, Iago Kupreishvili, Nodar Kekelidze. Removal of Impurities from Metallurgical Silicon by Crystal Pulling from Melt. Proceedings of the Georgian National Academy of Sciences. Chemical series. v.40, №1, pp.94-100, 2014.
  • 21. Leonti Gabrichidze, Elza Khutsishvili, Nana Kobulashvili, Nunu Khutsishvili,Temuri Gigitashvili, Ramaz Kharati, Gulnara Urushadze, Nodar Kekelidze. Obtaining of refined silicon by remelting method. Proceedings of the Georgian National Academy of Sciences. Chemical series. v. 39, №3-4, pp.256-259, 2013.
  • Leonti Gabrichidze, Elza Khutsishvili, Nana Kobulashvili, Nunu Khutsishvili,Teimuraz Gigitashvili, Ramaz Kharati, Nelli Gonjilasvili, Nodar Kekelidze. Purifying of metallurgical-grade silicon and investigation properties of refined silicon. Georgia Chemical Journal,13(2), p.42-45, 2013.
  • N. Kekelidze, J. Khubua, G. Kekelidze, D. Kekelidze, B. Kvirkvelia, E. Khutsishvili. Radiation-resistant Semiconductor Materials for Application on Accelerators, Nuclear Reactors and in Space. Proceedings of the Seventh International Conference "Physics in the LHC era". pp. 59-70. 2013.
  • E. Khutsishvili, B. Kvirkvelia,D. Kekelidze, V. Aliyev, D. Khomasuridze, Z. Guguchia, N.Kekelidze. Carrier mobility of InAs- and InP- rich InAs-InP solid solutions irradiated by fast neutrons. American Institute of Physics (AIP) Conference proceedings Conf. Proc. 1566(1), pp.103-104 (2013); Zurich, Switzerland. http://dx.doi.org/10.1063/1.4848306  (2013).
  • N. Kekelidze, J. Khubua, G. Kekelidze, D. Kekelidze, V. Aliyev, B. Kvirkvelia, E Khutsishvili. Radiation-resistant Semiconductor Materials for Application on Accelerators, Nuclear Reactors and in Space. Abstracts.of the Seventh Intern. Conf. “Physics in the LHC era”, Tbilisi. 2013.
  • N. Kekelidze, D.Kekelidze, L.Milovanova, E.Khutsishvili,Z.Davitaya, B. Kvirkvelia, D.Khomasuridze. Electrical Properties of InP Crystals with Inhomogeneites Regions. Acta Physica Polonica A, vol.121, No.1, pp.27-29, 2012.
  • N. Kekelidze, E.Khutsishvili, LGabrichidze, D.Khomasuridze, B.Kvirkvelia, N.Kobulashvili. ”Current Carriers Scattering in Semiconductors with Various Types of Inhomogeneity”, Nano Stadies, v.4, pp.95-102. http://www.nanoarchive.org/11667/1/No_33.pdf  2011.
  • N. Kekelidze, E. Khutsishvili, D. Khomasuridze, B. Kvirkvelia. Current Carriers Scattering
    on the Neutral Impurity Atoms in Crystals of Indium Phosphide. AIP (American Institute of Physics) Conference proceedings; Vol.1400, Issue 1, p.37-42(2011); doi:10.1063/1.3663081. 2011.
  • G.Tsintsadze, M.Tsintsadze, N. Kekelidze, D.Kekelidze, L.Milovanova, E. Khutsishvili at alias Radiation Technology of Nanoclusters Obtaining in Semiconductor indium phosphide crystals. Proc. of XIX Mendeleev Congress on“ General and Applied Chemistry“, 25 — 30 September, Volgograd, Russia,p.650,2011.
  • E. Khutsishvili, V.Metreveli, L.Gabrichidze, N.Kobulashvili, D.Khomasuridze, B.Kvirkvelia, N.Kekelidze.’’ Thermal expansion and internal friction of InAs crystals ”, Proc. of International Scientific Conference Modern Issues of Applied Physics, 30 March, 2011, Tbilisi.
  • N. Kekelidze, E. Khutsishvili, D. Khomasuridze, B. Kvirkvelia. Current Carriers Scattering on the Neutral Impurity Atoms in Crystals of Indium Phosphide. Advances in Applied Physics and Materials Science Congress. Book of Abstracts. Antalya, Turkey 2011.
  • N. Kekelidze, D.Kekelidze, L.Milovanova, E.Khutsishvili at alias. Electrical Properties of InP Crystals with Inhomogeneites Regions. Advances in Applied Physics and Materials Science Congress. Book of Abstracts. Antalya, Turkey. 2011.
  • D.Khomasuridze, .N,Kekeldze,  D.Kekelidze, L.Milovanova, E.Khutsishvili, Z.Davitaja  B.Kvirkvelia.” Improving the quality of defective InP crystalsby  radiation  technology”. Proc. of International Scientific Conference Modern Issues of Applied Physics, 30 March,2011, Tbilisi, pp. 278-281, 2011. 
  • Carbon in SiGe Alloys Bulk Crystals. New Developments in Materials Science”-Nova Science Publishers-Coeditor, USA, 2010.

  • Investigation of Technological Process of Magnesium Silicide Producing by Magnesium Thermal Restoration of Low-grade Quartzite. “New Developments in Materials Science”-Nova Science Publishers-Coeditor, USA, 2010.

  • Creation of nanoparticles in  InP crystals by large fluxes of  fast neutrons radiation. Nanochemistry –nanotechnology.  the Frst International Conference, Tbilisi, 2010. 

  • Crystal Perfection of Si-rich SiGe Alloys Bulk Single Crystals. Georgian Electronic Scientific Journal:Physics, #2(2), pp39-43, 2010.

  • Application of High Temperature Superconductos in the Space. Proc.of “Perspective materials, devices and structures for space applications” Workshop, pp. 69-70, 2009, 26-28 May, Yerevan, Armenia.

  • Сurrent Carrier Mobility inSi1-хGeх Crystals. Inorganic Materials,vol.45, №6, pp.599-601, 2009© Pleiades Publishing.

  • Подвижность носителей тока в кристаллах Si1-хGeх. Неорганические материалы, том 45, №6, с.655-658, 2009.

  • Распределение кислорода в кристаллах сплавов SiGe. Cб. докл.Х1 Межгос.семинара РАН «Термоэлектрики и их применения», г.С-Петербург, cтр. 285-287, 2009.

  • Структурное совершенство и электрические свойства объёмных монокристаллов сплавов SiGe. Cб. докл.Х1 Межгос.семинара РАН «Термоэлектрики и их применения», г.С-Петербур, стр.288-292, 2009.

  • Микротвердость сплавов SiGe, легированных As и B. Cб. докл. Х Межгос.семинара РАН «Термоэлектрики и их применения», г.С-Петербург, 2007.

  • Рассеяние носителей заряда на атомах примесей Sn в поликристаллических сплавах системы SiGe.Неорганические материалы т.42, №4, стр.398-400, 2006.

  • Physical-Mechanical properties of Si0.85Ge0.15 Alloys. Bull. of the Georgian Acad. of Sci., v.172, №1, pp.84-87, 2005.

  • High-Temperature Annealing Effects on the Thermoelectrical Properties Microstructure and Microhardness of Complexly Doped Si0.83Ge0.17 Alloys. Bulletin of the Georgian Academy of Sciences, 171, №3, 2005, pp. 482-485.

  • Preparation of High Effective Thermoelectrical Materials Based on Si Ge Alloys. Second International Conference on Inorganic Materials University of California Santa Barbara, USA, Di, 2000.

  • Scattering of Current Carriers upon the Atoms of Tin Dopant in Si Ge Alloys. Second International Conference on Inorganic Materials University of California Santa Barbara, USA, p.19, 2000

  • Behaviour of Arsenic in Si Ge Alloys at High Temperatures. Second International Conference on Inorganic Materials University of California Santa Barbara, USA, p.18, 2000.

  • Исследование термообработанных сплавов Si-Ge. Термоэлектрики и их применения. Доклады VII межгосударственного семинара. РАН ФТИ им.А.Ф.Иоффе, Санкт-Петербург, стр.182-185, 2000.

  • Омический контакт к твердым растворам системы Si1-X GeX. Термоэлектрики и их применения. Доклады VI межгосударственного семинара РАН ФТИ им. А.Ф.Иоффе, г.Санкт-Петербург, стр.121-122, 1999..

  • Thermal Expansion Coefficient of Gallium Arsenide at High Temperatures. Bulletin of the Georgian Academy of Sciences v.154, № 1, pp.65-66, 1996.

  • Microstructure and Microhardness of Gallium Arsenide. Bulletin of the Georgian Academy of Sciences v.154, №3, pp.366-367, 1996.

  • Infrared Refractive Index of Germanium- Silicon Alloy Crystals. Applied Optics v.31, №1, р.90-93, 1992.

  • Vibriational Modes in Germanium rich SiX Ge1-X Alloys. Solid State Communications v.76, №3, p.243-246, 1990.

  • Влияние окисления на электрические свойства сплавов германий—кремний. Сообщения АН ГССР, т.137, №1, стр.57-60, 1990.

  • Тензометрические свойства объемных кристаллов твердых растворов германий-кремний. Сб. "Исследование и применение твердых растворов германий-кремний", Баку, ЭЛМ, стр.45-49, 1990.

  • Влияние окисления на теплопроводность приповерхностных слоев Si и твердых растворов Si-Ge. Сб."Исследование и применение твердых растворов германий-кремний", Баку, ЭЛМ, стр.42-44, 1990.

  • Исследование электрофизических свойств монокристаллов разбавленных твердых растворов германий-кремний. Материалы докладов VII координационного совещание по исследованию и применению твердых растворов германий-кремний, Баку, 1988.

  • Коррозионная стойкость кремния, германия и сплавов на их основе. Материалы докладов VII координационного совещания по исследованию и применению твердых растворов германий-кремний, Баку, октябрь, 1988.

  • Влияние окисления на теплофизические свойства поверхностных слоев кремния и твердых растворов кремний-германий. Материалы докладов VII координационного совещания по исследованию и применению твердых растворов германий-кремний, Баку, октябрь, 1988.

  • Механические и тензометрические свойства объемных кристаллов твердых растворов германий-кремний. Материалы докладов VII координационного совещания по исследованию и применению твердых растворов германий-кремний, Баку, октябрь, 1988.

  • Подвижность носителей тока в легированных сплавах германий-кремний. Сообщения АН ГССР, т. 131, №2, стр.293-296, 1988.

  • Electrical Properties of Ge Si Alloy Svstem. Scripta Fac.Sci.Nat.Univ.Purk. Brun.CSSR. vol. 16, №5-6, pp.265-290, 1986.

  • Temperature Dependence of the Optical Spectra of Si, Ge and Ge Si Alloys. Physical Review В, v.33, №2, 1986.

  • Line Shape Analyses of Thermoreflectance Spectra of Ge Si Alloys. Scripta Fac.Sci.Nat.Univ.Purk. Brun.CSSR. vol. 16, №5-6, pp.253-264, 1986.

  • Electroreflectance of Pure and Doped Ge-Si Alloys. Scripta Fac.Sci.Nat.Univ.Purk. Brun.CSSR vol.16, №5-6, рр.219-251, 1986.

  • Temperature Dependence of the Optical Spectra of Si, Ge and Ge Si Alloys. Physical Review В, v.33, №2, 1986.

  • The Change of Optical Spectra of Si, Ge and Ge-Si Alloy between room and liquid nitrogen Temperature.Proc. of 8 konferencia Ceskoslovenskych fizikov, Bratislawa, 1985.

  • Соотношение между механизмами рассеяния носителей тока в легированных сплавах германий-кремний. Материалы докладов VI респ. научно-техн.конференции молодых ученых. Изд.Мецниереба, г.Тбилиси, 1985 г.

  • M.G. Kekua, E.V. Khutsishvili, Germanium-Silicon Semiconductor Solid Solutions, Tbilisi, Metsniereba, 1985. 

  • Disorder Broadening of E2 Optical Spectra in Ge-Si Alloys. Solid State Communications, v.47, №5, pp.387-389, 1983.

  • Оптическое исследование углерода в твердых растворах кремний-германий. Тезисы пятой Всесоюзной конференции по физико-химическим основам легирования полупроводниковых материалов, Москва, 1982.

  • Polycrystallinity Effect on the Electrical Properties of Doped Germanium. Phys. Stat. Sol.(a)v. 61, pp.K 1-K 3, 1980.

  • Directory “Solid Solutions in Semiconducting Systems“ Справочник Изд. Наука, Москва, 1978 г.

  • Directory.  “Solid Solutions in Semiconducting Systems“, Japan,1979.

  • Determination of the Composition of Ge Si Alloy by Ellipsometry. Phys.Stat.Sol.(a) v. 53, pp 321-325, 1979.

  • Влияние поликристалличности структуры на свойства легированного германия. Третья Всесоюзная конференция по физико-химическим основам легирования полупроводниковых материалов, Тезисы докладов, г. Москва, 1975.

  • Исследование влияния малых до¬бавок кремния на спектр отраже¬ния германия. Сб. “Вопросы металловедения и корозии металлов”, Изд. Мецниереба, г. Тбилиси, 1974.

  • Некоторые физические свойства легированных оловом сплавов кремний-германий. Сб."Химическая связь в крис¬таллах полупроводников и полуметаллов", Изд.Наука и техника, г.Минск, 1973.

  • Электропроводность и термо-э.д.с.сложнолегированных сплавов кремний-германий. Сб."Вопросы металловеде¬ния и коррозии металлов" Изд. Мецниереба, г.Тбилиси, 1972 .

  • Эффективная масса и время релаксации электронов в твердых растворах Si 0.85 Ge 0.1.5. Физика твердого тела, №6, 1971.

  • Подвижность электронов в сильно легированных твердых растворах Si-Ge. Физика и техника полупроводников, №5, стр.970-971, 1971.

  • Исследование эффекта Холла в сильно легированном сплаве Si-Ge n-типа при высоких температурах. Сб. “Исследование материалов для новой техники”, Изд. Мецниереба, г.Тбилиси, 1971.

  • Термо-э.д.с. и подвижность носителей тока в компенсированных сплавах Si-Ge. Изв. АН СССР, Неорганические материалы, №5, 1970.

  • Об эффективной массе плотности состояний электронов в сильно легированном сплаве Ge-Si. Сообщения АН ГССР, №3, 1969.

  • Исследование микротвердости сплавов системы германий-кремний. Изв. АН СССР, Неорганические материалы, №7, 1967.

Inventions ( Copyright Certificates, Patents)

  • The direct method of producing binary semiconductor radiation- resistant InAs-GaAs solid solutions by direct fusion National Intellectual Property Center“Saqpatent”,Georgia,#14142/01, 2016-05-11 (presented);
  • A method of improving the quality of the crystals of indium phosphide (InP). National Intellectual Property Center “Saqpatent”,Georgia,#14143/01, 2016-05-11 (presented);
  • Creation radiation- resistant to hard radiation semiconductor electrical material National Intellectual Property Center “Saqpatent”,Georgia,#14141/01, 2016-05-11 (presented);

Participation in Scientific Symposiums and Conferences

  • Effective distribution coefficient of impurities in Si at pulling from mg-Si melt. 4th International Conference “Nanotechnologies” Nano – 2016,October 24 – 27, 2016, Tbilisi, Georgia.
  • Peculiarities of “alloy” scattering in semiconductors. 4th International Conference “Nanotechnologies” Nano – 2016, October 24 – 27, 2016, Tbilisi, Georgia.
  • Nanosize clusters in InAs, InP compounds and their solid solutions InPx,As1-x.. 4th International Conference “Nanotechnologies” Nano – 2016,October 24-27, 2016, Tbilisi, Georgia.
  • Investigation of some Optical Properties of Functional for Photonics Semiconductor Compounds with Nanosize Clusters. FNM 2016 The International Workshop on Functional and Nanostructured Materials to be held in Tbilisi, Georgia 6th -10th September 2016.
  • Influence of Nanosize Clusters on the Optical Absorption near the Fundamental Egde in Indium Arsenide Crystals. FNM 2016 The International Workshop on Functional and Nanostructured Materials to be held in Tbilisi, Georgia 6th -10th September 2016.
  • Current Carriers Scattering on Nanosize Clusters in III–V Semiconductor Material. FNM 2016 The International Workshop on Functional and Nanostructured Materials to be held in Tbilisi, Georgia 6th -10th September 2016.
  • The effect of mutual compensatin of radiation donors and acceptors in semiconductors. The 2nd International Conference "Modern Technologies and Methods of Inorganic Materials Science", April 20-24, 2015 in Tbilisi (Georgia) 2015.
  • Effective segregation coefficient of microimpurities in Si obtained by Czochralski pulling
    directly from metallurgical Si melt. The 2nd International Conference "Modern Technologies and Methods of Inorganic Materials Science" April 20-24, 2015 in Tbilisi (Georgia) 2015.
  • Removal of Impurities from Metallurgical Silicon. The International Conference on “Advanced Materials and Technologies” (ICAMT), 21-23 October, Tbilisi (Georgia) 2015.
  • Исследование ортического поглощения в соединениях III-V. The International Conference on “Advanced Materials and Technologies “(ICAMT), 21-23 October, Tbilisi, (Georgia) 2015..
  • Технология создания радиационно-стойких материалов. The International Conference on “Advanced Materials and Technologies” (ICAMT), 21-23 October, Tbilisi, (Georgia) 2015.
  • Electrical Properties and Crystal Perfection of the n- type Si-rich SiGe Alloys Bulk Single Crystals. The 32nd International Conference on the Physics of Semiconductors (ICPS 2014) Austin, August 10-15, (USA)2014.
  • Transport Properties in Solid Solutions of InP and InAs Semiconducting Compounds. The 32nd International Conference on the Physics of Semiconductors (ICPS 2014) Austin, August 10-15, (USA)2014.
  • The Effect of Mutual Compensation of Radiation Donors and Acceptors and Creation of Radiation-resistant Materials.International Conference: Radiation Effects in Insulators and Nonmetallic Materials. REINM 2014. Astana (Kazakhstan) 2014.
  • Radiation- resistant materials for manufacturing photo elements functioning in Space. The International School on Naniphotonics and Phtovoltaics,August 28-September3,(2014),Tbilisi, (Georgia)2014.
  • Creation and Investigation of Radiation-hard Materials for Nuclear- Radiation Sensors. The NATO Science for Peace and Security Programme Nuclear- Radiation Nano Sensors Conference, March. Tbilisi, (Georgia)2014.
  • Carrier mobility of InAs- and InP- rich InAs-InP solid solutions irradiated by fast neutrons. The 31st International Conference on the Physics of Semiconductor,s July 29th – August 3rd 2012, Zurich, Switzerland (ICPS 2012) 2012.
  • Electrical Properties of InP Crystals with Inhomogeneites Regions. Congress the Advances in
    Applied Physics and Materials Science. 12 -15 May Antalya, Turkey 2011.
  • Current Carriers Scattering on the Neutral Impurity Atoms in Crystals of Indium Phosphide. . Congress the Advances in Applied Physics and Materials Science. 12 -15 May Antalya, Turkey 2011.
  • Improving the quality of defective InP crystalsby radiation technology. International Scientific Conference Modern Issues of Applied Physics, 30 March,2011, Tbilisi.
  • Thermal expansion and internal friction of InAs crystals, International Scientific Conference Modern Issues of Applied Physics, 30 March,2011, Tbilisi.
  • Carbon in SiGe Alloys Bulk Crystals. Intern. Conf. “Material Science Days”,8-10 July.Tbilisi. 2009.
  • Investigation of Technological Process of Magnesium Silicide Producing by Magnesium Thermal Restoration of Low-grade Quartzite. Intern. Conf. “Material Science Days”,8-10 July.Tbilisi. 2009.
  • Radiation-Resistant Semiconductor Materials and Devices for Application in Cosmos and Atomic Power Stations. Intern. Conf. “Material Science Days”,8-10 July.Tbilisi. 2009.

Participation in Scientific Grant Projects

  • STCU - GG 87: Elaboration and investigation of the Si–Ge system alloys with high-performance, manager of team, 2005-2007;
  • The Embassy of Switzerland in Tbilisi, the project “Ecological education for school-children and environment monitoring”, 2010-2011;

Awards and Premiums, Honorary Titles

  • Silver medal of Brno University for Successful Cooperation with Solid State Physics Department of Brno University in 1976-1991;

Additional information

  • Editor of book N.Kekelidaze, N,Shamugia. „ Low- temperature anomaly of electrons mobility in compensated germanium and silicon single crystals“ . Publishing House „Universal“, Tbilisi, 2006;